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| TO-220 Plastic Package Boca Semicondcutor Corp. BSC TIP100, 101, 102 TIP105, 106, 107 TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3.56 M A X. N L O 123 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 6 mA D.C. current gain IC = 3 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat hFE All dim insions in m m . K 100 105 max. 60 max. 60 max. max. max. max. min. max. 101 106 80 80 8.0 80 150 2.0 1.0 20 102 107 100 100 V V A W C V K K RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 100 105 max. 60 max. 60 max. 101 106 80 80 5.0 102 107 100 100 V V V http://www.bocasemi.com page: 1 TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 Collector current IC Collector peak current ICM Base current IB Total power dissipation up to TC = 25C Ptot Derate above 25C Total power dissipation up to T A = 25C Ptot Derate above 25C Junction temperature Tj Storage temperature Tstg THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS T amb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30 V IB = 0; VCE = 40 V IB = 0; VCE = 50 V IE = 0; VCB = 60V IE = 0; VCB = 80V IE = 0; V CB = 100V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; I B = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 3 A; IB = 6 mA IC = 8 A; IB = 80 mA Base-emitter on voltage IC = 8 A; VCE = 4 V D.C. current gain IC = 3 A; VCE = 4 V IC = 8 A; VCE = 4 V Small signal current gain IC = 3A; VCE = 4V; f = 1.0 MHz Output capacitance f = 0.1 MHz IE = 0; V CB = 10V, PNP NPN Forward voltage of commutation diode IF = -IC = 10A; IB = 0 Rth j-a Rth j-c max. max. max. max. max max. max max. 8.0 15 1.0 80 0.64 2.0 0.016 150 -65 to +150 62.5 1.56 A A A W WC / W WC / C C C W / C W / 100 105 ICEO ICEO ICEO ICBO ICBO ICBO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VBE(on)* hFE* hFE* |h fe | Co VF* max. 50 max. - max. - max. 50 max. - max. - max. min. min. min. max. max. max. min. max. min. min. max. max. max. 60 60 101 106 - 50 - - 50 - 8 80 80 5.0 2.0 2.5 2.8 1.0 20 200 4.0 300 200 2.8 102 107 - - 50 - - 50 A A A A A A mA 100 100 V V V V V V K K pF pF V * Pulsed: pulse duration = 300 s; duty cycle 2%. http://www.bocasemi.com page: 2 |
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